MCH6542 no.8950-1/5 applications mosfet gate drivers, relay drivers, lamp drivers, motor drivers. features composite type with a pnp transistor and an npn transistor contained in one package facilitating high-density mounting. ultrasmall package permitting applied sets to be small and slim. specifications ( ) : pnp absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (- -30)40 v collector-to-emitter voltage v ceo (- -)30 v emitter-to-base voltage v ebo (- -)5 v collector current i c (- -)300 ma collector current (pulse) i cp (- -)900 ma collector dissipation p c mounted on a ceramic board (600mm 2 ? 0.8m) 1unit 0.5 w t otal power dissipation p t mounted on a ceramic board (600mm 2 ? 0.8m) 0.55 w junction temperature tj 150 c storage temperature tstg - -55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)30v, i e =0a (--)100 na emitter cutoff current i ebo v eb =(--)4v, i c =0a (--)100 na dc current gain h fe v ce =(--)2v, i c =(--)10ma (200)300 (500)800 gain-bandwidth product f t v ce =(--)10v, i c =(--)50ma (520)380 mhz output capacitance cob v cb =(--)10v, f=1mhz (3)2.4 pf marking : eq continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : en8950 sanyo semiconductors d ata sheet specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 22807ea ti im tc-00000538 MCH6542 pnp / npn epitaxial planar silicon transistors push-pull circuit applications tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan http://semicon.sanyo.com/en/network
MCH6542 no.8950-2/5 continued from preceding page. ratings parameter symbol conditions min typ max unit collector-to-emitter saturation voltage v ce (sat) i c =(--)100ma, i b =(--)5ma (- -110)100 (--220)200 mv base-to-emitter saturation voltage v be (sat) i c =(--)100ma, i b =(--)5ma (--)0.9 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 a, i e =0a (--30)40 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (- -)30 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 a, i c =0a (--)5 v t urn-on time t on see specified test circuit. (39)42 ns storage time t stg see specified test circuit. (200)135 ns fall time t f see specified test circuit. (48)90 ns package dimensions electrical connection unit : mm (typ) 7022a-012 switching time test circuit [pnp] [npn] 56 1 4 23 1 : emitter1 (pnp tr) 2 : base1 (pnp tr) 3 : collector2 (npn tr) 4 : emitter2 (npn tr) 5 : base2 (npn tr) 6 : collector1 (pnp tr) top view 1 : emitter1 (pnp tr) 2 : base1 (pnp tr) 3 : collector2 (npn tr) 4 : emitter2 (npn tr) 5 : base2 (npn tr) 6 : collector1 (pnp tr) sanyo : mcph6 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 654 123 654 123 v r r b v cc = --12v v be =5v ++ 50? input output r l 220 f 470f pw=20s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 = --100ma v r r b v cc =12v v be = --5v + + 50? input output r l 220 f 470f pw=20s i b1 d.c. 1% i b2 i c =20i b1 = --20i b2 =300ma
MCH6542 no.8950-3/5 --100 --200 --300 --400 --50 --150 --250 --350 0 0- -0.2 --0.4 --0.6 --0.8 --1.0 0 0 --20 --40 --60 --80 --100 --120 --140 --160 --180 --200 i c -- v ce it04096 it04098 it04097 it04099 --0.2 --0.4 --1.0 --1.2 --0.6 --0.8 --1.4 --1.6 --1.8 --2.0 i c -- v be 10 h fe -- i c 23 57 --1.0 --10 23 57 --100 23 57 --1000 100 2 3 5 1000 7 2 3 5 7 --10 23 57 --1.0 --10 23 57 --100 23 57 --1000 --100 2 3 5 --1000 7 2 3 5 7 v ce (sat) -- i c i b =0 ma --0.2ma --0.4ma --0.6ma --0.8ma --1.0ma --2.0ma i c / i b =20 v ce = --2v [pnp] [pnp] [pnp] [pnp] ta=75 c 25 c --25 c ta=75 c --25 c --1.8ma --1.6ma --1.4ma --1.2ma 25 c collector-to-emitter voltage, v ce -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma collector current, i c -- m a dc current gain, h fe collector current, i c -- m a collector-to-emitter saturation voltage, v ce (sat) -- mv v ce = --2v ta=75 c 25 c --25 c 0 0 200 0.4 0.6 0.8 0.2 20 40 60 80 100 120 140 160 180 1.0 1.2 1.4 2.0 1.6 1.8 it05501 i b =0ma 0.2ma 0.4ma 0.6ma 1.0ma 1.2ma 1.6ma 1.4ma 1.8ma 2.0ma 0.8ma i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- ma [npn] 0 100 400 200 150 250 350 300 50 0 0.2 0.4 0.6 0.8 1.0 1.2 it11482 v ce =2v 25 c --25 c ta=75 c i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- ma [npn] 1.0 23 57 23 57 2 3 57 10 100 2 7 3 5 7 100 1000 1000 it11483 v ce =2v --25 c ta=75 c 25 c h fe -- i c collector current, i c -- ma dc current gain, h fe [npn] 100 10 2 3 5 7 1000 2 3 5 7 it11484 1.0 23 57 23 57 23 57 10 100 1000 i c / i b =20 t a=75 c 25 c -- 2 5 c v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv [npn]
MCH6542 no.8950-4/5 1.0 53 5 7 100 7 5 3 2 1000 100 27 5 3 27 5 3 27 10 it11487 it11486 1.0 357 10 23 5 7 23 5 7 2 100 1000 10000 1000 100 7 5 3 2 7 5 3 2 ta= - -25 c 25 c 75 c i c / i b =20 v ce =10v 10 1.0 27 35 2 7 35 235 0.1 1.0 2 3 7 5 10 it05507 f=1mhz f t -- i c cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v v be (sat) -- i c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- mv collector current, i c -- a gain-bandwidth product, f t -- mhz [npn] [npn] [npn] [npn] f=1mhz 0.1 0.1 it06065 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 32 57 32 57 1.0 10 out in 1k? 1k? i b base current, i b -- ma ron -- i b on resistance, ron -- ? [pnp] it04100 v be (sat) -- i c 23 57 --1.0 --10 23 57 --100 23 57 --1000 3 --1000 2 3 5 7 i c / i b =20 ta= --25 c 75 c 25 c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- mv [pnp] it04101 23 57 --1.0 --10 23 57 --100 23 57 --1000 5 100 2 3 5 1000 7 7 f t -- i c v ce = --10v collector current, i c -- ma gain-bandwidth product, f t -- mhz [pnp] it04102 1.0 cob -- v cb 23 57 --0.1 --1.0 23 57 --10 23 57 --100 10 2 3 5 7 f=1mhz output capacitance, cob -- pf collector-to-base voltage, v cb -- v [pnp] f=1mhz --0.1 0.1 ron -- i b it06066 7 5 3 2 10 7 5 3 2 7 5 3 2 1.0 100 32 57 32 57 --1.0 --10 out in 1k ? 1k ? i b base current, i b -- ma on resistance, ron -- ?
MCH6542 no.8950-5/5 ps sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. this catalog provides information as of february, 2007. specifications and information herein are subject to change without notice. 0.6 0 0.1 0.2 0.3 0.4 0.5 0.55 020406 080 100 120 140 160 it10744 p c -- ta ambient temperature, ta -- c collector dissipation, p c -- w 1unit mounted on a ceramic board (600mm 2 ?0.8mm) total dissipation [pnp/npn]
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